Huili Grace Xing: шукати на сайті Z-Library

Рік:

2018

Мова:

english

Файл:

PDF, 1.21 MB

english, 2018

Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas

Bader, Samuel James, Chaudhuri, Reet, Nomoto, Kazuki, Hickman, Austin, Chen, Zhen, Then, Han Wui, Muller, David A., Xing, Huili Grace, Jena, Debdeep

Журнал:

Encomendero, Jimy, Protasenko, Vladimir, Rana, Farhan, Jena, Debdeep, Xing, Huili Grace

Рік:

2018

Мова:

english

Файл:

PDF, 1.37 MB

english, 2018

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Журнал:

Physical Review Applied

Рік:

2020

Мова:

english

Файл:

PDF, 1.11 MB

english, 2020

Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

Li, Guowang, Wang, Ronghua, Song, Bo, Verma, Jai, Cao, Yu, Ganguly, Satyaki, Verma, Amit, Guo, Jia, Xing, Huili Grace, Jena, Debdeep

Журнал:

Рік:

2013

Мова:

english

Файл:

PDF, 546 KB

english, 2013

Comprehensive structural and optical characterization of MBE grown MoSe 2 on graphite, CaF 2 and graphene

Vishwanath, Suresh, Liu, Xinyu, Rouvimov, Sergei, Mende, Patrick C, Azcatl, Angelica, McDonnell, Stephen, Wallace, Robert M, Feenstra, Randall M, Furdyna, Jacek K, Jena, Debdeep, Grace Xing, Huili

Журнал:

2D Materials

Рік:

2015

Мова:

english

Файл:

PDF, 2.62 MB

english, 2015

Intrinsic electron mobility limits in β -Ga 2 O 3

Ma, Nan, Tanen, Nicholas, Verma, Amit, Guo, Zhi, Luo, Tengfei, Xing, Huili (Grace), Jena, Debdeep

Журнал:

Рік:

2016

Мова:

english

Файл:

PDF, 709 KB

english, 2016

1.1 kV Vertical GaN p-n Diodes with p-GaN Regrown by Molecular Beam Epitaxy

Hu, Zongyang, Nomoto, Kazuki, Qi, Meng, Li, Wenshen, Zhu, Mingda, Gao, Xiang, Jena, Debdeep, Xing, Huili Grace

Журнал:

Рік:

2017

Мова:

english

Файл:

PDF, 2.03 MB

english, 2017

Gallium nitride tunneling field-effect transistors exploiting polarization fields

Chaney, Alexander, Turski, Henryk, Nomoto, Kazuki, Hu, Zongyang, Encomendero, Jimy, Rouvimov, Sergei, Orlova, Tatyana, Fay, Patrick, Seabaugh, Alan, Xing, Huili Grace, Jena, Debdeep

Журнал:

Рік:

2020

Мова:

english

Файл:

PDF, 1.59 MB

english, 2020

GaN HEMTs on Si with Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

Li, Lei, Nomoto, Kazuki, Pan, Ming, Li, Wenshen, Hickman, Austin, Miller, Jeffrey, Lee, Kevin, Hu, Zongyang, Bader, Samuel James, Lee, Soo Min, Hwang, James C.M., Jena, Debdeep, Xing, Huili Grace

Журнал:

Chuanxin Lian, Huili Grace Xing, Yu-Chia Chang, Nick Fichtenbaum

Рік:

2020

Мова:

english

Файл:

PDF, 663 KB

english, 2020

The role of doping type in setback layers on wafer-fused AlGaAs/GaAs/GaN HBTs

Журнал:

Рік:

2008

Мова:

english

Файл:

PDF, 220 KB

english, 2008

Broadband graphene terahertz modulators enabled by intraband transitions

Sensale-Rodriguez, Berardi, Yan, Rusen, Kelly, Michelle M., Fang, Tian, Tahy, Kristof, Hwang, Wan Sik, Jena, Debdeep, Liu, Lei, Xing, Huili Grace

Журнал:

Nature Communications

Рік:

2012

Мова:

english

Файл:

PDF, 525 KB

english, 2012

Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

Afroz Faria, Faiza, Guo, Jia, Zhao, Pei, Li, Guowang, Kumar Kandaswamy, Prem, Wistey, Mark, (Grace) Xing, Huili, Jena, Debdeep

Журнал:

Рік:

2012

Мова:

english

Файл:

PDF, 1003 KB

english, 2012

Extraordinary Control of Terahertz Beam Reflectance in Graphene Electro-absorption Modulators

Sensale-Rodriguez, Berardi, Yan, Rusen, Rafique, Subrina, Zhu, Mingda, Li, Wei, Liang, Xuelei, Gundlach, David, Protasenko, Vladimir, Kelly, Michelle M., Jena, Debdeep, Liu, Lei, Xing, Huili Grace

Журнал:

Nano Letters

Рік:

2012

Мова:

english

Файл:

PDF, 1.49 MB

english, 2012

Efficient terahertz electro-absorption modulation employing graphene plasmonic structures

Sensale-Rodriguez, Berardi, Yan, Rusen, Zhu, Mingda, Jena, Debdeep, Liu, Lei, Grace Xing, Huili

Журнал:

Senale-Rodriguez, Berardi, Yeqing Lu,, Fay, Patrick, Jena, Debdeep, Seabaugh, Alan, Xing, Huili Grace, Barboni, Leonardo, Silveira, Fernando

Рік:

2012

Мова:

english

Файл:

PDF, 813 KB

english, 2012

[IEEE 2012 IEEE Subthreshold Microelectronics Conference (SubVT) - Waltham, MA, USA (2012.10.9-2012.10.10)] 2012 IEEE Subthreshold Microelectronics Conference (SubVT) - Perspectives of TFETs for low power analog ICs

Рік:

2012

Мова:

english

Файл:

PDF, 628 KB

english, 2012

Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

Sik Hwang, Wan, Remskar, Maja, Yan, Rusen, Protasenko, Vladimir, Tahy, Kristof, Doo Chae, Soo, Zhao, Pei, Konar, Aniruddha, (Grace) Xing, Huili, Seabaugh, Alan, Jena, Debdeep

Журнал:

Sensale-Rodriguez, Berardi, Zhao, Pei, Jena, Debdeep, Xing, Huili Grace

Рік:

2012

Мова:

english

Файл:

PDF, 964 KB

english, 2012

Thermal Conductivity of Monolayer Molybdenum Disulfide Obtained from Temperature-Dependent Raman Spectroscopy

Yan, Rusen, Simpson, Jeffrey R., Bertolazzi, Simone, Brivio, Jacopo, Watson, Michael, Wu, Xufei, Kis, Andras, Luo, Tengfei, Hight Walker, Angela R., Xing, Huili Grace

Журнал:

ACS Nano

Рік:

2014

Мова:

english

Файл:

PDF, 1.32 MB

english, 2014

[IEEE 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2013) - Mainz, Germany (2013.09.1-2013.09.6)] 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Perspectives of graphene SymFETs for THz applications

Рік:

2013

Мова:

english

Файл:

PDF, 262 KB

english, 2013

Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates a

Hwang, Wan Sik, Zhao, Pei, Tahy, Kristof, Nyakiti, Luke O., Wheeler, Virginia D., Myers-Ward, Rachael L., Eddy, Charles R., Gaskill, D. Kurt, Robinson, Joshua A., Haensch, Wilfried, Xing, Huili (Grace

Журнал:

APL Materials

Рік:

2015

Мова:

english

Файл:

PDF, 5.02 MB

english, 2015

SPIE Proceedings [SPIE SPIE Sensing Technology + Applications - Baltimore, Maryland, USA (Monday 5 May 2014)] Terahertz Physics, Devices, and Systems VIII: Advanced Applications in Industry and Defense - Approaching real-time terahertz imaging using photo-induced reconfigurable aperture arrays

Anwar, Mehdi F., Crowe, Thomas W., Manzur, Tariq, Shams, Md. Itrat Bin, Jiang, Zhenguo, Rahman, Syed, Qayyum, Jubaid, Hesler, Jeffrey L., Cheng, Li-Jing, Xing, Huili Grace, Fay, Patrick, Liu, Lei

Рік:

2014

Мова:

english

Файл:

PDF, 786 KB

english, 2014

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Design and optimization of GaN lateral polarization-doped super-junction (LPSJ): An analytical study

Song, Bo, Zhu, Mingda, Hu, Zongyang, Nomoto, Kazuki, Jena, Debdeep, Xing, Huili Grace

Рік:

2015

Мова:

english

Файл:

PDF, 755 KB

english, 2015

Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes

Qi, Meng, Li, Guowang, Protasenko, Vladimir, Zhao, Pei, Verma, Jai, Song, Bo, Ganguly, Satyaki, Zhu, Mingda, Hu, Zongyang, Yan, Xiaodong, Mintairov, Alexander, Xing, Huili Grace, Jena, Debdeep

Журнал:

Bhardwaj, Shubhendu, Sensale-Rodriguez, Berardi, Xing, Huili Grace, Volakis, John L.

Рік:

2015

Мова:

english

Файл:

PDF, 1.18 MB

english, 2015

[IEEE 2015 73rd Annual Device Research Conference (DRC) - Columbus, OH, USA (2015.6.21-2015.6.24)] 2015 73rd Annual Device Research Conference (DRC) - Full-wave hydrodynamic model for predicting THz emission from grating-gate RTD-gated plasma wave HEMTs

Рік:

2015

Мова:

english

Файл:

PDF, 832 KB

english, 2015

1.7 kV and 0.55 mΩ·cm2 GaN p-n Diodes on Bulk GaN Substrates with Avalanche Capability

Nomoto, Kazuki, Song, Bo, Hu, Zongyang, Zhu, Mingda, Qi, Meng, Kaneda, Naoki, Mishima, Tomoyoshi, Nakamura, Tohru, Jena, Debdeep, Xing, Huili Grace

Журнал:

Subramania, Ganapathi S., Foteinopoulou, Stavroula, Condori Quispe, Hugo O., Encomendero, Jimy, Xing, Huili Grace, Sensale Rodriguez, Berardi

Рік:

2015

Мова:

english

Файл:

PDF, 782 KB

english, 2015

SPIE Proceedings [SPIE SPIE Nanoscience + Engineering - San Diego, California, United States (Sunday 28 August 2016)] Active Photonic Materials VIII - Terahertz plasmon amplification in RTD-gated HEMTs with a grating-gate

Рік:

2016

Мова:

english

Файл:

PDF, 648 KB

english, 2016

[IEEE 2016 74th Annual Device Research Conference (DRC) - Newark, DE, USA (2016.6.19-2016.6.22)] 2016 74th Annual Device Research Conference (DRC) - GaN tunnel switch diodes

Chaney, Alexander, Qi, Meng, Islam, S. M., Xing, Huili Grace, Jena, Debdeep

Рік:

2016

Мова:

english

Файл:

PDF, 292 KB

english, 2016

[IEEE 2016 74th Annual Device Research Conference (DRC) - Newark, DE, USA (2016.6.19-2016.6.22)] 2016 74th Annual Device Research Conference (DRC) - Vertical Ga2O3 Schottky barrier diodes on single-crystal β-Ga2O3 (−201) substrates

Song, Bo, Verma, Amit Kumar, Nomoto, Kazuki, Zhu, Mingda, Jena, Debdeep, Xing, Huili Grace

Рік:

2016

Мова:

english

Файл:

PDF, 288 KB

english, 2016

High-quality InN films on GaN using graded InGaN buffers by MBE

Islam, SM, Protasenko, Vladimir, Rouvimov, Sergei, Xing, Huili (Grace), Jena, Debdeep

Журнал:

Japanese Journal of Applied Physics

Рік:

2016

Мова:

english

Файл:

PDF, 7.97 MB

english, 2016

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 28 January 2017)] Gallium Nitride Materials and Devices XII - Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes

Chyi, Jen-Inn, Fujioka, Hiroshi, Morkoç, Hadis, Nanishi, Yasushi, Schwarz, Ulrich T., Shim, Jong-In, Liu, Cheng, Ooi, Yu Kee, Islam, S. M., Xing, Huili Grace, Jena, Debdeep, Zhang, Jing

Рік:

2017

Мова:

english

Файл:

PDF, 588 KB

english, 2017

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

Hu, Zongyang, Nomoto, Kazuki, Song, Bo, Zhu, Mingda, Qi, Meng, Pan, Ming, Gao, Xiang, Protasenko, Vladimir, Jena, Debdeep, Xing, Huili Grace

Журнал:

IEEE Transactions on Electron Devices

Рік:

2015

Мова:

english

Файл:

PDF, 1.24 MB

english, 2015

Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

Li, Wenshen, Nomoto, Kazuki, Pilla, Manyam, Pan, Ming, Gao, Xiang, Jena, Debdeep, Xing, Huili Grace

Журнал:

Рік:

2017

Мова:

english

Файл:

PDF, 2.28 MB

english, 2017

[IEEE 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Tokyo, Japan (2017.5.16-2017.5.18)] 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Tunneling devices over van der Waals bonded hetero-interface

Yan, Rusen, Jena, Debdeep, Xing, Huili Grace

Рік:

2017

Мова:

english

Файл:

PDF, 597 KB

english, 2017

Enhancement-mode Ga2O3 vertical Transistors with breakdown voltage > 1 kV

Hu, Zongyang, Nomoto, Kazuki, Li, Wenshen, Tanen, Nicholas, Sasaki, Kohei, Kuramata, Akito, Nakamura, Tohru, Jena, Debdeep, Xing, Huili Grace

Журнал:

Turski, Henryk, Bharadwaj, Shyam, Xing, Huili (Grace), Jena, Debdeep

Рік:

2018

Мова:

english

Файл:

PDF, 1.04 MB

english, 2018

Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions

Журнал:

Journal of Applied Physics

Рік:

2019

Файл:

PDF, 4.96 MB

2019

A polarization-induced 2D hole gas in undoped gallium nitride quantum wells

Chaudhuri, Reet, Bader, Samuel James, Chen, Zhen, Muller, David A., Xing, Huili Grace, Jena, Debdeep

Журнал:

Science

Рік:

2019

Мова:

english

Файл:

PDF, 2.39 MB

english, 2019

Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

Xu, Runjie Lily, Muñoz Rojo, Miguel, Islam, S. M., Sood, Aditya, Vareskic, Bozo, Katre, Ankita, Mingo, Natalio, Goodson, Kenneth E., Xing, Huili Grace, Jena, Debdeep, Pop, Eric

Журнал:

Journal of Applied Physics

Рік:

2019

Мова:

english

Файл:

PDF, 1.75 MB

english, 2019

Guiding Principles for Trench Schottky Barrier Diodes Based on Ultrawide Bandgap Semiconductors: A Case Study in GaâOâ

Li, Wenshen, Nomoto, Kazuki, Hu, Zongyang, Jena, Debdeep, Xing, Huili Grace

Журнал:

IEEE Transactions on Electron Devices

Рік:

2020

Файл:

PDF, 3.27 MB

2020

Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy

Jia Guo, Yu Cao, Chuanxin Lian, Tom Zimmermann, Guowang Li, Jai Verma, Xiang Gao, Shiping Guo, Paul Saunier, Mark Wistey, Debdeep Jena, Huili (Grace) Xing

Журнал:

physica status solidi (a)

Рік:

2011

Мова:

english

Файл:

PDF, 307 KB

english, 2011

Subcritical barrier AlN/GaN E/D-mode HFETs and inverters

Tom Zimmermann, Yu Cao, Guowang Li, Gregory Snider, Debdeep Jena, Huili (Grace) Xing

Журнал:

physica status solidi (a)

Рік:

2011

Мова:

english

Файл:

PDF, 466 KB

english, 2011

The role of setback layers on the breakdown characteristics of AlGaAs/GaAs/GaN HBTs

Chuanxin Lian, Huili Grace Xing

Журнал:

Рік:

2008

Мова:

english

Файл:

PDF, 198 KB

english, 2008

Formation of ohmic contacts to ultra-thin channel AlN/GaN HEMTs

Tom Zimmermann, David Deen, Yu Cao, Debdeep Jena, Huili Grace Xing

Журнал:

Рік:

2008

Мова:

english

Файл:

PDF, 582 KB

english, 2008

2.3 nm barrier AlN/GaN HEMTs with insulated gates

David Deen, Tom Zimmermann, Yu Cao, Debdeep Jena, Huili Grace Xing

Журнал:

Рік:

2008

Мова:

english

Файл:

PDF, 219 KB

english, 2008

InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field

Rui Li, Yeqing Lu, Soo Doo Chae, Guangle Zhou, Qingmin Liu, Chen Chen, M. Shahriar Rahman, Tim Vasen, Qin Zhang, Patrick Fay, Tom Kosel, Mark Wistey, Huili (Grace) Xing, Siyuranga Koswatta, Alan Seaba

Журнал:

physica status solidi (RRL) - Rapid Research Letters

Рік:

2012

Мова:

english

Файл:

PDF, 623 KB

english, 2012

In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates

Prasanna Sivasubramani, Tae Joo Park, Brian E. Coss, Antonio Lucero, Jie Huang, Barry Brennan, Yu Cao, Debdeep Jena, Huili (Grace) Xing, Robert M. Wallace, Jiyoung Kim

Журнал:

Рік:

2012

Мова:

english

Файл:

PDF, 516 KB

english, 2012

Foreword

Mike Capano, Huili (Grace) Xing

Журнал:

Journal of Electronic Materials

Рік:

2009

Мова:

english

Файл:

PDF, 53 KB

english, 2009

Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

Yan, Rusen, Zhang, Qin, Li, Wei, Calizo, Irene, Shen, Tian, Richter, Curt A., Hight-Walker, Angela R., Liang, Xuelei, Seabaugh, Alan, Jena, Debdeep, Grace Xing, Huili, Gundlach, David J., Nguyen, N. V

Журнал:

Shenai, Krishna, Bernstein, Gary H., Xing, Huili Grace, Wu, Jie

Рік:

2012

Мова:

english

Файл:

PDF, 939 KB

english, 2012

[IEEE NAECON 2010 - IEEE National Aerospace and Electronics Conference - Dayton, OH, USA (2010.07.14-2010.07.16)] Proceedings of the IEEE 2010 National Aerospace & Electronics Conference - Chip-scale DC/DC power converter

Рік:

2010

Мова:

english

Файл:

PDF, 3.08 MB

english, 2010

Unique prospects for graphene-based terahertz modulators

Sensale-Rodriguez, Berardi, Fang, Tian, Yan, Rusen, Kelly, Michelle M., Jena, Debdeep, Liu, Lei, (Grace) Xing, Huili

Журнал: